Epitaxial Wafer SiC-GaN EPI refers to a semiconductor thin film grown on a substrate. Stanford Optics has rich experience in manufacturing and supplying high-quality optical products.
Wafer Diameter |
4" |
5" |
6" |
8" |
|
EPI Layer |
Dopant |
Boron, Phos, Arsenic |
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Orientation |
<100>, <111> |
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Conductivity type |
P/P++, N/N++, N/N+, N/N+/N++, N/P/P, P/N/N+ |
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Resistivity |
0.001-50 Ohm-cm |
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Res. Uniformity |
Standard <6%, Maximum Capabilities <2% |
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Thickness (um) |
0.1-100 |
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Thickness Uniformity |
Standard <3%, Maximum Capabilities <1% |
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Substrate |
Orientation |
<100>, <111> |
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Conductivity type/Dopant |
P Type/Boron , N Type/Phos, N Type/As, N Type/Sb |
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Thickness (um) |
300-725 |
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Resistivity |
0.001-100 Ohm-cm |
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Surface Condition |
P/P, P/E |
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Particle |
<50@.0.5um |
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