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OP4387 Germanium Sulphide (GeS) Crystal

Catalog No
OP4387
Material
GeS
Size
~10 mm
Structure Type
Orthorhombic
Purity
>99.995%

Stanford Optics supplies high-purity GeS crystals suited for research and development in optoelectronics and nanoelectronics.

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OP4387 Germanium Sulphide (GeS) Crystal
OP4387 Germanium Sulphide (GeS) Crystal
Description
Specifications
Reviews

Product Overview

Germanium Sulphide (GeS) is a layered semiconductor known for its indirect band gap near 1.6 eV. Its crystal structure consists of stacked layers held by van der Waals forces, allowing exfoliation into ultrathin 2D sheets. This unique feature places GeS among group-14 transition metal monochalcogenides with distinctive electronic and optical properties.

Stanford Optics supplies high-purity GeS crystals suited for research and development in optoelectronics and nanoelectronics.

Key Features

Applications

Crystal XRD

Packaging

To maintain crystal quality, our GeS crystals are carefully packaged and handled during storage and shipment. This ensures the material arrives in pristine condition, ready for your applications.

Specifications

Material

GeS

Crystal size

~10 mm

Electrical properties

Semiconductor

Crystal structure

Orthorhombic

Unit cell parameters

a = 0.4025, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90°

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