Stanford Optics supplies high-purity GeS crystals suited for research and development in optoelectronics and nanoelectronics.
Germanium Sulphide (GeS) is a layered semiconductor known for its indirect band gap near 1.6 eV. Its crystal structure consists of stacked layers held by van der Waals forces, allowing exfoliation into ultrathin 2D sheets. This unique feature places GeS among group-14 transition metal monochalcogenides with distinctive electronic and optical properties.
Stanford Optics supplies high-purity GeS crystals suited for research and development in optoelectronics and nanoelectronics.
Indirect band gap around 1.6 – 1.65 eV
Layered orthorhombic crystal structure
High chemical purity (>99.995%)
Suitable for exfoliation into thin layers
Stable semiconductor properties for device fabrication
Advanced optoelectronic devices
Nanoelectronic components
2D material research and development
Photodetectors and sensors
To maintain crystal quality, our GeS crystals are carefully packaged and handled during storage and shipment. This ensures the material arrives in pristine condition, ready for your applications.
Material |
GeS |
Crystal size |
~10 mm |
Electrical properties |
Semiconductor |
Crystal structure |
Orthorhombic |
Unit cell parameters |
a = 0.4025, b = 1.117 nm, c = 1.135 nm, α = β = γ = 90° |
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