In2Se3 Crystal is a semiconductor with a bulk single crystal bandgap of 1.41eV. Stanford Optics has rich experience in manufacturing and supplying high-quality Optical Products.
In2Se3 (α phase) is a semiconductor with a bulk single crystal bandgap of 1.41eV. The layers are stacked together through van der Waals force interaction and can be mechanically peeled off into a two-dimensional monolayer. The crystal is hexagonal/rectangular and has a metallic appearance.
Crystal Structure |
hexagonal crystal system |
Size |
6-8mm Length, Thickness. 0.1-0.4mm |
Growth Method |
Float zone technique |
Purity |
>99.995 |
Lattice Constant |
a=b=0.398nm,c=18.89nm,α=β=90°,γ=120° |
Melting Point |
890 ℃ |
The raw material for the preparation of indium semiconductor materials.
Our In2Se3 Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
Crystal Structure |
hexagonal crystal system |
Size |
6-8mm Length, Thickness. 0.1-0.4mm |
Growth Method |
Float zone technique |
Purity |
>99.995 |
Lattice Constant |
a=b=0.398nm,c=18.89nm,α=β=90°,γ=120° |
Melting Point |
890 ℃ |
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