Sapphire Epitaxial Wafer EPI Wafer features excellent electrical insulation to effectively prevent radiation caused by scattered current from spreading to nearby components. Stanford Optics has rich experience in manufacturing and supplying high-quality optical products.
Parameters range for Silicon on Sapphire (SOS) Epi Wafers |
|
Wafer diameter |
76 mm, 100 mm, 150 mm |
Orientation |
(1012) ± 1º (R-plane) |
Substrate dopant |
- |
Epi-layer thickness, µm |
0,3 – 2,0 |
Epi-layer dopant |
Phosphorous, Boron |
n-type |
according to spec. |
p-type |
1,0 – 0,01 |
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