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CY3306 Sapphire Epitaxial Wafer EPI Wafer

Catalog No
CY3306

Sapphire Epitaxial Wafer EPI Wafer features excellent electrical insulation to effectively prevent radiation caused by scattered current from spreading to nearby components. Stanford Optics has rich experience in manufacturing and supplying high-quality optical products.

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CY3306 Sapphire Epitaxial Wafer EPI Wafer
CY3306 Sapphire Epitaxial Wafer EPI Wafer
Specifications
Reviews
Specifications

Parameters range for Silicon on Sapphire (SOS) Epi Wafers

Wafer diameter

76 mm, 100 mm, 150 mm

Orientation

(1012) ± 1º (R-plane)

Substrate dopant

-

Epi-layer thickness, µm

0,3 – 2,0

Epi-layer dopant

Phosphorous, Boron

n-type

according to spec.

p-type

1,0 – 0,01

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