Cr2Ge2Te6 Crystal Description
Cr2Ge2Te6 Crystal is a layered ferromagnetic semiconductor boasting a Curie temperature (Tc) of 65K in its bulk form. This material showcases layer-dependent characteristics in terms of Curie temperature, coercive fields, and magnetic properties. The synthesis of Cr2Ge2Te6 crystals is accomplished through either flux-zone or chemical vapor transport techniques, ensuring an exceptional purity level of 99.9999% and a defect-free structure. These crystals guarantee a robust ferromagnetic response, coupled with the highest attainable levels of purity and crystallinity.
Cr2Ge2Te6 Crystal Specifications
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Crystal size
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~3 mm
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Electrical properties
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Ferromagnetic semiconductor
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Density (g/cm3)
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5.599
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Crystal structure
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Hexagonal
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Unit cell parameters
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a = b = 0.675 nm, c = 2.063 nm, α = β = 90°, γ = 120°
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Purity
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>99.995 %
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Cr2Ge2Te6 Crystal Application
- XRD: single crystal and powder X-ray diffraction (D8 Venture Bruker and D8 Advance Bruker)
- EDX: Energy-dispersive X-ray spectroscopy for stoichiometric analysis
- Raman system
Cr2Ge2Te6 Crystal Packaging
Our Cr2Ge2Te6 Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
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