Tin Diselenide Crystal Description
Tin Diselenide Crystal is a semiconductor having an indirect bandgap. SnSe₂ is 1.0 eV direct band gap semiconductor. It becomes 1.4 eV direct semiconductor in the monolayer form. It displays remarkable and unusual optical, mechanical, and electrical properties. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate.
Tin Diselenide Crystal Specifications
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Material
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SnSe2
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Crystal size
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~8 mm
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Electrical properties
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Semiconductor
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Crystal structure
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Hexagonal
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Unit cell parameters
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a = b = 0.381, c = 0.614 nm, α = β = 90°, γ = 120°
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Tin Diselenide Crystal Application
Tin Diselenide Crystal is a semiconductor with an indirect band gap of ~2.2 eV.
Tin Diselenide Crystal XRD
Tin Diselenide Crystal Packaging
Our Tin Diselenide Crystal is carefully handled during storage and transportation to preserve the quality of our product in its original condition.
Tin Diselenide Crystal FAQs
Q1: What is tin diselenide (SnSe2)?
Tin diselenide is a compound with the chemical formula SnSe2. It belongs to the group IV-VI semiconductors and forms as a layered, n-type semiconductor with a hexagonal structure similar to that of molybdenum disulfide (MoS2).
Q2: What are the properties of tin diselenide crystals?
SnSe2 crystals exhibit properties such as indirect band gap semiconductor behavior, good optical and electronic properties, and thermal stability. It has a band gap of approximately 1.0 eV, making it suitable for infrared optoelectronics and photovoltaic applications.
Q3: How are tin diselenide crystals synthesized?
SnSe2 crystals can be synthesized using methods like chemical vapor transport (CVT), Bridgman-Stockbarger technique, and vapor phase deposition. Researchers also use mechanical or liquid exfoliation techniques to produce SnSe2 in thin-layer form for various applications.
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